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Volumn 92, Issue 8, 2005, Pages 437-443

Analytical 2D modeling for potential distribution and threshold voltage of the short channel fully depleted cylindrical/surrounding gate MOSFET

Author keywords

Cylindrical surrounding gate (CSG) MOSFET; Evanescent mode analysis; Short channel effects; Threshold voltage

Indexed keywords

MATHEMATICAL MODELS; MOSFET DEVICES; POISSON EQUATION;

EID: 31744444957     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/08827510412331314412     Document Type: Article
Times cited : (15)

References (7)
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    • Kranti, A.A.1    Haldar, S.2    Gupta, R.S.3
  • 2
    • 0028485272 scopus 로고
    • Analytical two dimensional modeling for potential distribution and threshold voltage of the short channel fully depleted SOI MOSFET
    • V. Aggarwal et al., "Analytical two dimensional modeling for potential distribution and threshold voltage of the short channel fully depleted SOI MOSFET", Solid State Electronics, 37, pp. 1537-1542, 1994.
    • (1994) Solid State Electronics , vol.37 , pp. 1537-1542
    • Aggarwal, V.1
  • 3
    • 0031079417 scopus 로고    scopus 로고
    • Scaling theory for cylindrical, fully depleted, surrounding gate MOSFET's
    • C.P. Auth and J.D. Plummer, "Scaling theory for cylindrical, fully depleted, surrounding gate MOSFET's", IEEE Etec. Dev. Letters, 18, pp. 74-76, 1997.
    • (1997) IEEE Etec. Dev. Letters , vol.18 , pp. 74-76
    • Auth, C.P.1    Plummer, J.D.2
  • 4
    • 0034258881 scopus 로고    scopus 로고
    • Analytic description of short channel effects in fully depleted double gate and cylindrical/surrounding gate MOSFETs
    • S.H. Oh, D. Monroe and J.M. Hergenrother, "Analytic description of short channel effects in fully depleted double gate and cylindrical/surrounding gate MOSFETs", Elec. Dev. Lett., 21, pp. 397-399, 2000.
    • (2000) Elec. Dev. Lett. , vol.21 , pp. 397-399
    • Oh, S.H.1    Monroe, D.2    Hergenrother, J.M.3
  • 5
    • 0032314539 scopus 로고    scopus 로고
    • Evanescent mode analysis of short channel effect in fully depleted SOI related MOSFETs
    • D. Monroe and J.M. Hergenrother, "Evanescent mode analysis of short channel effect in fully depleted SOI related MOSFETs", Proc. IEEE Int. SOI Conf., pp. 157-158, 1998.
    • (1998) Proc. IEEE Int. SOI Conf. , pp. 157-158
    • Monroe, D.1    Hergenrother, J.M.2
  • 6
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    • Analytical threshold model for short channel double gate SOI MOSFET's
    • K. Suzuki, Y. Tosaka and T. Sugii, "Analytical threshold model for short channel double gate SOI MOSFET's", IEEE T-ED, 42, pp. 1166-1168, 1996.
    • (1996) IEEE T-ED , vol.42 , pp. 1166-1168
    • Suzuki, K.1    Tosaka, Y.2    Sugii, T.3
  • 7
    • 0024612456 scopus 로고    scopus 로고
    • Short channel effect in fully depleted SOI MOSFET's
    • K.K. Young, "Short channel effect in fully depleted SOI MOSFET's", IEEE T-ED, 36, pp. 399-402, 1998.
    • (1998) IEEE T-ED , vol.36 , pp. 399-402
    • Young, K.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.