Short-Channel Effect in Fully Depleted SOI MOSFET’s

IEEE Transactions on Electron Devices

Volumn 36, Issue 2, 1989, Pages 399-402

  Young, K Konrad ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES--COMPUTER SIMULATION;

FULLY DEPLETED SOI MOSFETS; POISSON EQUATION; SHORT-CHANNEL EFFECT; SOFTWARE PACKAGE PISCES;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024612456     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.19942     Document Type: Article

References (7)

1. J.-P. Colinge and T. I. Kamins, “CMOS circuits made in thin (100 nm) SIMOX films,” presented at the IEEE SOS/SOI Technology Workshop, Durango, CO, Oct. 1987.
2. PISCES-IIB, Stanford Electronics Lab., 1985.
3. T. Toyabe and S. Asai, “Analytical models of threshold voltage and breakdown voltage of short-channel MOSFET’s derived from two-di-mensional analysis,” IEEE J. Solid-State Circuits, vol. SC-14, pp. 375–383, 1979.
4. K. K. Young, “Analysis of conduction in fully depleted silicon-on-insulator MOSFET’s,” submitted to IEEE Trans. Electron Devices.
5. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981, 438.
6. P. K. Ko, “Hot-electron effects in MOSFET’s,” Ph.D. dissertation, Univ. of California, Berkeley, 1982.
7. L. D. Yau, “A simple theory to predict the threshold voltage of short-channel IGFET’s,” Solid-State Electron., vol. 17, pp. 1059–1063, 1974.