Investigation of indium distribution in InGaAs/GaAs quantum dot stacks using high-resolution x-ray diffraction and Raman scattering

Journal of Applied Physics

Volumn 99, Issue 2, 2006, Pages

  Mazur, Yu I ^a   Wang, Zh M ^a   Salamo, G J ^a   Strelchuk, V V ^b   Kladko, V P ^b   MacHulin, V F ^b   Valakh, M Ya ^b   Manasreh, M O ^c  

^a UNIVERSITY OF ARKANSAS   (United States)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c University of Arkansas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMICAL THEORY; INGAAS ISLANDS; PARALLEL STRAINS; SURFACE SEGREGATION;

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 31644450871     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2163009     Document Type: Article

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