Relaxation of misfit-induced stress in nitride-based heterostructures

Journal of Crystal Growth

Volumn 237-239, Issue 1 4II, 2002, Pages 947-950

  Terao, Shinji ^a   Iwaya, Motoaki ^a   Sano, Tomoaki ^a   Nakamura, Tetsuya ^a   Kamiyama, Satoshi ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

A1. Roughening; A1. Stresses; A1. X ray diffraction; A3. Metalorganic vapour phase epitaxy; B1. Nitrides

Indexed keywords

CRYSTAL GROWTH; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; STRESS ANALYSIS; STRESS RELAXATION; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

CATASTROPHIC RELAXATION;

HETEROJUNCTIONS;

EID: 0036531184     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02009-7     Document Type: Article

References (11)