Stress evolution during epitaxial growth of SrO films on hydrogen-terminated Si(1 1 1) surfaces

Solid State Communications

Volumn 124, Issue 7, 2002, Pages 239-242

  Asaoka, H ^a,c   Machida, Y ^a   Yamamoto, H ^a   Hojou, K ^a   Saiki, K ^b   Koma, A ^b  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

A. Surfaces and interfaces; B. Epitaxy; D. Mechanical properties

Indexed keywords

CHEMICAL BONDS; CRYSTAL LATTICES; DEPOSITION; EPITAXIAL GROWTH; OXIDATION; REAL TIME SYSTEMS; SILICON; STRAIN; SUBSTRATES; THICKNESS MEASUREMENT; THIN FILMS;

INTRINSIC STRESS;

STRESS ANALYSIS;

EID: 0036843506     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(02)00579-3     Document Type: Article

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