Microwave p-i-n diodes and switches based on 4H-SiC

IEEE Electron Device Letters

Volumn 27, Issue 2, 2006, Pages 108-110

  Camara, Nicolas ^a,b   Zekentes, Konstantinos ^a   Romanov, Leonid P ^c   Kirillov, Aleksey V ^c   Boltovets, Mykola S ^d   Vassilevski, Konstantin V ^e   Haddad, George ^f  

^a INSTITUTE OF COMPUTER SCIENCE   (Greece)

^b IMEP LAHC   (France)

^c Svetlana Electronpribor   (Russian Federation)

^d State Enterprise Scientific Research Institute ORION   (Ukraine)

^e NEWCASTLE UNIVERSITY   (United Kingdom)

^f UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Microwave switches; p i n diode; Silicon carbide

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; OPTICAL SWITCHES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE;

DIODE FABRICATION; DIODE STRUCTURE; MICROWAVE APPLICATION; MOCROWAVE P-I-N DIODES;

SEMICONDUCTOR DIODES;

EID: 31644436952     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.862686     Document Type: Article

References (6)

1. A. V. Bludov, A S. Boltovets, K. V. Vassilevski, A. V. Zorenko, K. Zekentes, A. A. Lebedev, and V. A. Krivutsa, "Simulation and prototype fabrication of microwave modulators with 4H-SiC p-i-n diodes," Mater. Sci. Forum, vol. 457-460, pp. 1089-1092, Oct. 2004.
2. A. V. Bludov, M. S. Boltovets, K. V. Vassilevski, A. V. Zorenko, K. Zekentes, V. A. Krivutsa, T. V. Kritskaya, and A. A. Lebedev, "Microwave switching, based on 4H-SiC p-i-n diodes," Tech. Phys. Lett., vol. 30, no. 2, pp. 123-125, 2004.
3. M. S. Boltovets, V. V. Basanets, A. V. N. Camara, V. A. Krivutsa, and K. Zekentes, "Investigation of microwave switching 4H-SiC p-i-n diodes in the 20-500 °C temperature range," Mater. Sci. Forum, vol. 483-485, pp. 997-1000, 2005.
4. N. Camara and K. Zekentes, "Study of the reactive ion etching of 6H-SiC and 4H-SiC in SF6/Ar plasmas by optical emission spectroscopy and laser interferometry," Solid State Electron., vol. 46, pp. 1959-1963, 2002.
5. K. Vassilevski and K. Zekentes, "Method of Making an Ohmic Contact to p-Type Silicon Carbide, Comprising Titanium Carbide and Nickel Silicide," U.S. Patent 6 599 644, Jul. 29, 2003.
6. M. S. Boltovets, V. V. Basanets, N. Camara, V. A. Krivutsa, and K. Zekentes, "Investigation of packaged microwave 4H SiC p-i-n diodes in the 20-700 °C temperature range," presented at the ICSCRM, Pittsburgh, PA, Sep. 18-23, 2005.