Microwave Switches Based on 4H-SiC p-i-n Diodes

Technical Physics Letters

Volumn 30, Issue 2, 2004, Pages 123-125

  Bludov, A V ^a,b,c   Boltovets, N S ^a,b,c   Vasilevskii, K V ^a,b,c   Zorenko, A V ^a,b,c   Zekentes, K ^a,b,c   Krivutsa, V A ^a,b,c   Kritskaya, T V ^a,b,c   Lebedev, A A ^a,b,c  

^a Orion Research Institute   (Ukraine)

^b IOFFE INSTITUTE   (Russian Federation)

^c INSTITUTE OF COMPUTER SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1642354917     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1666959     Document Type: Article

References (6)

1. A Handbook on Semiconductor Devices: Microwave Diodes, Ed. by B. A. Nalivaǐko (Rasko, Tomsk, 1992).
2. A. A. Lebedev and V. E. Chelnokov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 1096 (1999) [Semiconductors 33, 999 (1999)].
3. A. A. Lebedev and V. E. Chelnokov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 1096 (1999) [Semiconductors 33, 999 (1999)].
4. R. J. Trew et al., Proc. IEEE 79, 598 (1991).
5. Advanced Design System 2002: A Set of Program Codes (Agilent Technologies, 2002).
6. K. Vasilevskii, K. Zekentes, G. Constantinidis, and A. Strel'chuk, Solid-State Electron. 44, 1173 (2000).