Investigation of microwave switching 4HSiC p-i-n diodes in the 20÷500°C temperature range

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 997-1000

  Boltovets, M S ^a   Basanets, V V ^a   Camara, N ^b   Krivutsa, V A ^a   Zekentes, K ^b  

^a State Enterprise Scientific Research Institute ORION   (Ukraine)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

Blocking voltage; Diode resistance; Diode switching; Epitaxial structures; High temperature resistant package; Minority charge carrier lifetime; Switching 4HSiC p i n diode; Temperature sensor

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MICROWAVES; SILICON CARBIDE;

BLOCKING VOLTAGE; DIODE RESISTANCE; HIGH-TEMPERATURE-RESISTANT PACKAGE; MINORITY CHARGE CARRIER LIFETIME; SWITCHING 4HSIC P-I-N DIODE;

SWITCHING;

EID: 31644448513     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.997     Document Type: Conference Paper

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