Simulation and prototype fabrication of microwave modulators with 4H-SiC p-i-n diodes

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1089-1092

  Bludov, A V ^a   Boltovets, M S ^a   Vassilevski, K V ^b   Zorenko, A V ^a   Zekentes, K ^c   Lebedev, A A ^b   Krivutsa, V A ^a  

^a State Enterprise Research Institute ORION   (Ukraine)

^b IOFFE INSTITUTE   (Russian Federation)

^c INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

4H SiC; Epitaxial structure; Microstrip; Microwave modulator; P i n diode

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; INDUCTANCE; LIGHT MODULATION; SEMICONDUCTOR DIODES; SILICON CARBIDE;

FREQUENCY RANGE; MICROSTRIPS; MICROWAVE MODULATOR; P-I-N DIODES; SPECIFIC CAPACITANCE;

MICROWAVE DEVICES;

EID: 8744280266     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1089     Document Type: Conference Paper

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