Measurement of base and collector transit times in thin-base InGaAs/InP HBT

IEEE Electron Device Letters

Volumn 24, Issue 7, 2003, Pages 430-432

  Kahn, M ^a   Blayac, S ^a   Riet, M ^a   Berdaguer, Ph ^a   Dhalluin, V ^a   Alexandre, F ^a   Godin, J ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

Graded base; HBT; Indium phosphide; InGaAs; Transit time

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC RESISTANCE MEASUREMENT; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

DRIFT-DIFFUSION APPROACH; GRADED BASE; TRANSIT TIME;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0042388031     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.815005     Document Type: Letter

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