Ferroelectric properties of Pt/Pb5Ge3O 11/Pt and Pt/Pb5Ge3O11/HfO 2/Si structures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 9 A, 2005, Pages 6644-6647

  Ohara, Shuichiro ^a   Aizawa, Koji ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Ferroelectric thin film; HfO 2; Low dielectric constant; Low temperature crystallization; MFIS; Pb5Ge3O11PGO; Sol gel method

Indexed keywords

CRYSTALLIZATION; DIODES; FERROELECTRICITY; HAFNIUM COMPOUNDS; LOW TEMPERATURE EFFECTS; PERMITTIVITY; POLARIZATION; SILICON; SOL-GELS;

FERROELECTRIC THIN FILM; HFO2; LOW TEMPERATURE CRYSTALLIZATION; MFIS;

PLATINUM COMPOUNDS;

EID: 31544452288     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.6644     Document Type: Article

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