Fatigue free ferroelectric Pb5Ge3O11 thin films prepared by metalorganic chemical vapor deposition

Integrated Ferroelectrics

Volumn 26, Issue 1, 1999, Pages 75-83

  Li, Tingkai ^a   Zhang, Fengyan ^a   Ono, Yoshi ^a   Hsu, Sheng Teng ^a  

^a SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; FATIGUE OF MATERIALS; FERROELECTRIC MATERIALS; GERMANIUM; LATTICE CONSTANTS; LEAD; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; SEMICONDUCTING LEAD COMPOUNDS; SILICON WAFERS;

COERCIVE FIELD; HYSTERESIS LOOP; LATTICE STRUCTURE; PHASE FORMATION;

THIN FILMS;

EID: 0033324632     PISSN: 10584587     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1080/10584589908215612     Document Type: Article

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