Photon-induced kondo satellites in a single-electron transistor

Science

Volumn 304, Issue 5675, 2004, Pages 1293-1295

  Kogan, Andrei ^a   Amasha, Sami ^a   Kastner, M A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; MICROWAVES; PHOTONS; RESONANCE; SEMICONDUCTOR QUANTUM DOTS; TRANSISTORS;

KONDO SATELLITES; SINGLE-ELECTRON TRANSISTORS;

ELECTRONS;

ELECTRON; MICROWAVE RADIATION;

ACCELERATION; ARTICLE; CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRON TRANSPORT; ENERGY; MICROWAVE IRRADIATION; PHOTON; PRIORITY JOURNAL; QUANTUM MECHANICS; SEMICONDUCTOR; SURFACE CHARGE;

EID: 2542546786     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.1096377     Document Type: Article

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21. We thank D. Goldhaber-Gordon and D. Mahalu for designing and fabricating the SET devices used in this work; H. Shtrikman for growing the GaAs/AlGaAs heterostructures; C. Cross, I. Gelfand, G. Granger, and K. MacLean for experimental and calculational assistance; and L. Levitov, W. Hoffstetter, and L. Glazman for discussions. Supported by the U.S. Army Research Office (contract DAAD19-01-1-0637), NSF grant DMR-0102153, NSF Nanoscale Science and Engineering Centers award DMR-0117795, and NSF Materials Research Science and Engineering Centers award DMR 02-13282.