Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition

Journal of Crystal Growth

Volumn 268, Issue 3-4 SPEC. ISS., 2004, Pages 509-514

  Liu, W ^a   Soh, C B ^b   Chen, P ^a   Chua, S J ^a,b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

A1. Atomic force microscopy; A1. Composition pulling effect; A1. Photoluminescence; A1. V pits; A1. X ray diffraction; A3. Metalorganic chemical vapor deposition; B1. AlInGaN quaternary

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; COMPOSITION; CRYSTAL LATTICES; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; X RAY DIFFRACTION ANALYSIS;

COMPOSITION PULLING EFFECTS; QUATERNARY ALLOYS;

ALUMINUM ALLOYS;

EID: 3142784354     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.082     Document Type: Conference Paper

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