Degradation and recovery of SiGe HBTs following radiation and hot-carrier stressing

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1901-1906

  Sheng, S R ^a,c   McAlister, S P ^a   McCaffrey, J P ^a   Kovacic, S J ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b SiGe Semiconductor   (Canada)

^c DALHOUSIE UNIVERSITY   (Canada)

Author keywords

Electrical stressing; Radiation stressing; SiGe HBTs

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; DEGRADATION; GAMMA RAYS; HEAT TREATMENT; IRRADIATION; SCANNING; SEMICONDUCTING SILICON COMPOUNDS; STRESS ANALYSIS; VACUUM APPLICATIONS;

CURRENT GAIN; ELECTRICAL STRESSING; RADIATION STRESSING; SIGE HETEROJUNCTION BIPOLAR TRANSISTORS (HBT);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 3142781653     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.033     Document Type: Conference Paper

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