Current gain degradation in SiGe HBTs by hot carriers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 5, 2002, Pages 1961-1966

  Gill, C R ^a   McAlister, S P ^a   Storey, C ^a   McKinnon, W R ^a   Kovacic, S ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b SiGe Semiconductor   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC FIELDS; HOT CARRIERS; KINETIC ENERGY; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; TUNNEL JUNCTIONS; ULTRAHIGH VACUUM;

BAND-TO-BAND TUNNELING; BASE-EMITTER DIODE; BASE-EMITTER JUNCTION; FORWARD-COLLECTOR STRESSING; OPEN-COLLECTOR METHOD; SHOCKELY-READ-HALL RECOMBINATION EFFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036026359     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1503789     Document Type: Article

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