Hot-carrier induced degradation and recovery in polysilicon-emitter bipolar transistors

Solid-State Electronics

Volumn 46, Issue 10, 2002, Pages 1603-1608

  Sheng, S R ^a   McAlister, S P ^a   Storey, C ^a   Lee, L S ^b   Hwang, H P ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Hot carriers; Polysilicon BJT; Reliability; Reverse bias stress

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DEGRADATION; HOT CARRIERS; POLYSILICON; RELIABILITY; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

POLYSILICON-EMITTER BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0036779173     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00112-0     Document Type: Article

References (12)