Role of molecular beam epitaxy parameters on InGaAs surface roughness

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1558-1561

  Deng, X ^a,b   Liu, W ^a   Lin, M E ^a   Zhang, Jie ^a,c  

^a Alpha Industries Inc   (United States)

^b Science and Technology Division   (United States)

^c 815 RL Smith ME EM Building   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; CRYSTAL LATTICES; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

CRYSTAL LATTICE MATCH; GROWTH FRONT; GROWTH TEMPERATURE; HIGH RESOLUTION X RAY DIFFRACTION ANALYSIS; MOLECULAR BEAM EPITAXY PARAMETERS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0035535352     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1376386     Document Type: Conference Paper

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