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Volumn 68, Issue 21, 1996, Pages 3010-3012

Strain and relaxation in InAs and InGaAs films grown on GaAs(001)

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001123311     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116680     Document Type: Article
Times cited : (23)

References (18)
  • 15
    • 21544478695 scopus 로고    scopus 로고
    • The small value of F for the 4 ML film necessitated using the experimental determination of 1+R in the fits.
    • The small value of F for the 4 ML film necessitated using the experimental determination of 1+R in the fits.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.