SCOPUS 정보 검색 플랫폼

Volumn 201, Issue 8, 2004, Pages 1617-1620

Current aspects and future perspectives of high-density MRAM

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; ELECTRON TUNNELING; MAGNETORESISTANCE; MOSFET DEVICES; OPTIMIZATION; OXIDATION; RESEARCH AND DEVELOPMENT MANAGEMENT;

MAGNETIC TUNNEL JUNCTIONS (MTJ); MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM); MEMORY ELEMENTS; SPIN PRESERVATION;

RANDOM ACCESS STORAGE;

EID: 3142718331 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/pssa.200304539 Document Type: Conference Paper

Times cited : (5)

References (9)

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