A Process Integration of High-Performance 64-kb MRAM

IEEE Transactions on Magnetics

Volumn 39, Issue 5 II, 2003, Pages 2851-2853

  Kim, H J ^a   Jeong, W C ^a   Koh, K H ^a   Jeong, G T ^a   Park, J H ^a   Lee, S Y ^a   Oh, J H ^a   Song, I H ^a   Jeong, H S ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Magnetic tunnel junction (MTJ); Magnetoresistive random access memory (MRAM); Process integration; Shorting failure

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; MAGNETIC FIELD EFFECTS; MAGNETIC SEMICONDUCTORS; MICROMETERS; RANDOM ACCESS STORAGE; SHORT CIRCUIT CURRENTS; SURFACE ROUGHNESS; TUNNEL JUNCTIONS;

MAGNETIC TUNNEL JUNCTIONS (MTJ);

MAGNETIC STORAGE;

EID: 0141953085     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2003.816243     Document Type: Article

References (5)

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