Kink-Free Design of Submicrometer MRAM Cell

IEEE Transactions on Magnetics

Volumn 39, Issue 5 II, 2003, Pages 2842-2844

  Lee, K J ^a   Park, Wanjun ^a   Kim, Taewan ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Kink; Magnetoresistive random access memory (MRAM); Micromagnetic simulation; Selectivity

Indexed keywords

ASPECT RATIO; COMPUTER SIMULATION; MAGNETIC FIELD EFFECTS; MAGNETIZATION; MICROMETERS; RANDOM ACCESS STORAGE; REMANENCE; THICKNESS MEASUREMENT;

MICROMAGNETICS;

MAGNETIC STORAGE;

EID: 0141987727     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2003.816240     Document Type: Article

References (4)

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4. T. Schrefl, J. Fidler, J. N. Chapman, and K. J. Kirk, "Micromagnetic simulation of domain structures in patterned magnetic tunnel junctions," J. Appl. Phys., vol. 89, p. 7000, 2001.