Carrier relaxation in closely stacked InAs quantum dots

Journal of Applied Physics

Volumn 96, Issue 1, 2004, Pages 150-154

  Nakaoka, T ^a   Tatebayashi, J ^a   Arakawa, Y ^a   Saito, T ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC EXCITATION; ELECTRON TUNNELING; LIGHT AMPLIFIERS; MONOCHROMATORS; NUCLEATION; OPTICAL DEVICES; PHONONS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

CROSS-GAIN MODULATION; SEMICONDUCTOR OPTICAL AMPLIFIER (SOA); TIME-RESOLVED PHOTOLUMINESCENCE; TRANSITION ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 3142700750     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1755857     Document Type: Article

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