Study of radiation effects in γ-ray irradiated power VDMOSFET by DCIV technique

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 2285-2293

  Park, Mun Soo ^a,b   Wie, Chu R ^a,b  

^a IEEE   (United States)

^b the State University of New York   (United States)

Author keywords

ray; DCIV; Interface traps; Oxide charge; Radiation effects; Total dose effect; VDMOSFET

Indexed keywords

OXIDE CHARGE; TOTAL DOSE EFFECT;

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; GAMMA RAYS; MOS DEVICES; RADIATION EFFECTS;

MOSFET DEVICES;

EID: 0035723158     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983208     Document Type: Conference Paper

References (20)

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