Studies on the degradation of InP/InGaAs/InP double heterojunction bipolar transistors induced by silicon nitride passivation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 B, 2002, Pages 1059-1061

  Wang, Hong ^a   Ng, Geok Ing ^a   Yang, Hong ^a   Radhakrishnan, K ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Heterojunction bipolar transistor; InP; Passivation; Silicon nitride

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; PASSIVATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON NITRIDE;

CURRENT GAINS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036478689     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1059     Document Type: Conference Paper

References (5)