Comparative study of porosity in low-k SiOCH thin films obtained at different deposition conditions

Materials Science Forum

Volumn 445-446, Issue , 2004, Pages 268-270

  Brusa, Roberta S ^a   Macchi, Carlos ^a   Mariazzi, Sebastiano ^a   Spagolla, Monica ^a   Karwasz, Grzegorz P ^a   Zecca, Antonio ^a  

^a UNIVERSITY OF TRENTO   (Italy)

Author keywords

Low Dielectric Constant Materials; Ortho Positronium; Porosity; SiOCH Film

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; ELLIPSOMETRY; MICROELECTRONICS; NEUTRON SCATTERING; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PORE SIZE; POROSITY; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SILICON COMPOUNDS; X RAY SCATTERING;

LOW DIELECTRIC CONSTANT MATERIALS; ORTHO-POSITRONIUM; SIOCH FILMS; SMALL ANGLE X-RAY SCATTERING (SAXS);

THIN FILMS;

EID: 3142656804     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.445-446.268     Document Type: Conference Paper

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