Transient-enhanced Si diffusion on natural-oxide-covered Si(0 0 1) nano-structures during vacuum annealing

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 23, Issue 3-4 SPEC. ISS., 2004, Pages 442-448

  Lichtenberger, H ^a   Muhlberger M ^a   Schelling, C ^a   Schwinger, W ^a   Senz, S ^b   Schaffler F ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Oxide desorption; Self diffusion; Silicon; Silicon nanostructures; Vacuum annealing

Indexed keywords

CRYSTAL STRUCTURE; DEPOSITION; DIFFUSION IN SOLIDS; IMAGE ANALYSIS; NANOSTRUCTURED MATERIALS; OPTICAL RESOLVING POWER; OXIDES; PARTIAL PRESSURE; PASSIVATION; SILICON; VACUUM;

OXIDE DESORPTION; SELF-DIFFUSION; SILICON NANOSTRUCTURES; VACUUM ANNEALING;

ANNEALING;

EID: 3142656537     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.03.015     Document Type: Conference Paper

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