In situ measurements of SiO(g) production during dry oxidation of crystalline silicon

Applied Physics Letters

Volumn 53, Issue 10, 1988, Pages 888-890

  Walkup, R E ^a   Raider, S I ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

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EID: 36549098707     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.100105     Document Type: Article

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