550 GHz-fT pseudomorphic InP-HEMTs with reduced source-drain resistance

Device Research Conference - Conference Digest, DRC

Volumn 2003-January, Issue , 2003, Pages 145-146

  Shinohara, K ^a   Yamashita, Y ^b   Endoh, A ^b   Watanabe, I ^c   Hikosaka, K ^b   Mimura, T ^b   Hiyamizu, S ^c   Matsui, T ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

Current density; Current voltage characteristics; Delay effects; Etching; Frequency; HEMTs; Voltage

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ETCHING; GALLIUM ALLOYS; GALLIUM COMPOUNDS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR ALLOYS;

CAP STRUCTURE; DELAY EFFECTS; ELECTRON VELOCITY; FREQUENCY; PARASITIC RESISTANCES; PSEUDOMORPHIC INGAAS; RF PERFORMANCE; SOURCE AND DRAINS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84931824652     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2003.1226908     Document Type: Conference Paper

References (3)

1. K. Shinohara, et al., Jpn. J. Appl. Phys., Part 2, 41, L437 (2002).
2. K. Shinohara, et al., Tech. Dig. 2002 DRC, p. 163.
3. T. Enoki, et al., IEEE Electron Device Lett., 11, 502 (1990).