CMOS application of schottky source/drain SOI MOSFET with shallow doped extension

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2170-2175

  Matsumoto, Sumie ^a   Nishisaka, Mika ^a   Asano, Tanemasa ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Floating body effect; Ga doping; Sb doping; Schottky MOSFET; Shallow junction; Silicon on insulator

Indexed keywords

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; MOS DEVICES; OSCILLATORS (ELECTRONIC); SEMICONDUCTING ANTIMONY; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY;

DRAIN-INDUCED BARRIER LOWERING (DIBL); FLOATING BODY EFFECTS (FBE); LATERAL BIPOLAR CHARACTERISTICS; SHALLOW JUNCTIONS;

MOSFET DEVICES;

EID: 3142637088     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2170     Document Type: Conference Paper

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