메뉴 건너뛰기




Volumn 1996, Issue 1-2, 1996, Pages 13-30

Semiconductor ultraviolet photodetectors

Author keywords

[No Author keywords available]

Indexed keywords


EID: 3142624749     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (19)

References (69)
  • 1
    • 84876608599 scopus 로고
    • Ultraviolet and X-ray detectors
    • Chapter 15, ed. by R. W. Waynant and M.N. Ediger, McGraw-Hill, New York
    • G.R. Carruthers: Ultraviolet and X-ray detectors. In: Electro-Optics Handbook, Chapter 15, ed. by R. W. Waynant and M.N. Ediger, McGraw-Hill, New York 1994.
    • (1994) Electro-Optics Handbook
    • Carruthers, G.R.1
  • 2
    • 0343057194 scopus 로고
    • Photon detectors for the ultraviolet and X-ray region
    • ed. by E. E. Koch, North-Holland, Amsterdam
    • J.G. Timothy and R. P. Madden: Photon detectors for the ultraviolet and X-ray region. In: Handbook on Synchrotron Radiation, p. 315, ed. by E. E. Koch, North-Holland, Amsterdam 1983.
    • (1983) Handbook on Synchrotron Radiation , pp. 315
    • Timothy, J.G.1    Madden, R.P.2
  • 6
    • 0026963121 scopus 로고
    • NASAs ultraviolet astrophysics branch: The next decade
    • B.Y. Welsh and M. Kaplan: NASAs ultraviolet astrophysics branch: the next decade. Proc. SPIE 1743 (1992) 452.
    • (1992) Proc. SPIE , vol.1743 , pp. 452
    • Welsh, B.Y.1    Kaplan, M.2
  • 7
    • 84876597311 scopus 로고
    • UV image sensors and associated technologies
    • C.L. Joseph: UV image sensors and associated technologies. Wisconsin Astrophysics 562 (1995) 1.
    • (1995) Wisconsin Astrophysics , vol.562 , pp. 1
    • Joseph, C.L.1
  • 8
    • 0029231656 scopus 로고
    • Ultra-violet detectors for astrophysics, present and future
    • M.P. Ulmer, M. Razeghi and E. Bigan: Ultra-violet detectors for astrophysics, present and future. Proc. SPIE 2397, (1995) 210.
    • (1995) Proc. SPIE , vol.2397 , pp. 210
    • Ulmer, M.P.1    Razeghi, M.2    Bigan, E.3
  • 9
    • 0043043130 scopus 로고
    • Flash technology for charge-coupled-device imaging
    • J.R. Janesick, D. Campbell, T. Elliott and T. Daud: Flash technology for charge-coupled-device imaging. Opt. Eng. 26 (1987) 825.
    • (1987) Opt. Eng. , vol.26 , pp. 825
    • Janesick, J.R.1    Campbell, D.2    Elliott, T.3    Daud, T.4
  • 12
    • 0029370154 scopus 로고
    • How to capture low-light-level images without intensifiers
    • September
    • G.M. Williams and M. M. Blouke: How to capture low-light-level images without intensifiers. Laser Focus World, (September 1995) 129.
    • (1995) Laser Focus World , pp. 129
    • Williams, G.M.1    Blouke, M.M.2
  • 13
    • 6144261628 scopus 로고    scopus 로고
    • Semiconductor ultraviolet detectors
    • M. Razeghi and A. Rogalski: Semiconductor ultraviolet detectors. J. Appl. Phys. 79 (1996) 7433.
    • (1996) J. Appl. Phys. , vol.79 , pp. 7433
    • Razeghi, M.1    Rogalski, A.2
  • 14
    • 3042815846 scopus 로고
    • Photodetectors for the 0.1 to 1.0 μm spectral region
    • ed. by L. Morton, Academic Press, New York
    • D.H. Seib and L.W. Aukerman: Photodetectors for the 0.1 to 1.0 μm spectral region. In: Advances in Electronics and Electron Physics, 34, p. 95, ed. by L. Morton, Academic Press, New York 1973.
    • (1973) Advances in Electronics and Electron Physics , vol.34 , pp. 95
    • Seib, D.H.1    Aukerman, L.W.2
  • 16
    • 21544461610 scopus 로고
    • Large-band-gap SiC, III-V nitride, and IIf-VI ZnSe-based semiconductor device technologies
    • H. Morkoc, S. Strire, G.B. Gao, M.E. Lin, B. Sverdlov and M. Burns: Large-band-gap SiC, III-V nitride, and IIf-VI ZnSe-based semiconductor device technologies. J. Appl. Phys. 76 (1994) 1363.
    • (1994) J. Appl. Phys. , vol.76 , pp. 1363
    • Morkoc, H.1    Strire, S.2    Gao, G.B.3    Lin, M.E.4    Sverdlov, B.5    Burns, M.6
  • 18
    • 0019015868 scopus 로고
    • Self-scanned photodiode array: A multichannel spectrometric detector
    • Y. Talmi and R.W. Simpson: Self-scanned photodiode array: a multichannel spectrometric detector. Appl. Opt. 19 (1980) 1401.
    • (1980) Appl. Opt. , vol.19 , pp. 1401
    • Talmi, Y.1    Simpson, R.W.2
  • 19
    • 0141754769 scopus 로고
    • Silicon UV-photodiodes using natural inversion layers
    • T.E. Hansen: Silicon UV-photodiodes using natural inversion layers. Phys. Scr. 18 (1978) 471.
    • (1978) Phys. Scr. , vol.18 , pp. 471
    • Hansen, T.E.1
  • 20
    • 0000402028 scopus 로고
    • Quantum efficiency stability of silicon photodiodes
    • R. Korde and J. Geist: Quantum efficiency stability of silicon photodiodes. Appl. Opt. 26 (1987) 5284.
    • (1987) Appl. Opt. , vol.26 , pp. 5284
    • Korde, R.1    Geist, J.2
  • 21
    • 0028757447 scopus 로고
    • Silicon photodiodes with integrated thin film filters for selective bandpasses in the extreme ultraviolet
    • L.R. Canfield, R. Vest, T. N. Woods and R. Korde: Silicon photodiodes with integrated thin film filters for selective bandpasses in the extreme ultraviolet. Proc. SPIE 2282 (1994) 31.
    • (1994) Proc. SPIE , vol.2282 , pp. 31
    • Canfield, L.R.1    Vest, R.2    Woods, T.N.3    Korde, R.4
  • 22
    • 0002970198 scopus 로고
    • Stable, high quantum efficiency silicon photodiodes for vacuum-UV applications
    • R. Korde, L.R. Canfield and B. Wallis: Stable, high quantum efficiency silicon photodiodes for vacuum-UV applications. Proc. SPIE 932, (1988) 153.
    • (1988) Proc. SPIE , vol.932 , pp. 153
    • Korde, R.1    Canfield, L.R.2    Wallis, B.3
  • 23
    • 0023170195 scopus 로고
    • Stable, high quantum efficiency, UV-enhanced silicon photodiodes by arsenic diffusion
    • R. Korde and J. Geist: Stable, high quantum efficiency, UV-enhanced silicon photodiodes by arsenic diffusion. Soild-State Electronics 30 (1987) 89.
    • (1987) Soild-State Electronics , vol.30 , pp. 89
    • Korde, R.1    Geist, J.2
  • 24
    • 84975635026 scopus 로고
    • Stability and quantum efficiency performance of silicon photodiode detectors in the far ultraviolet
    • L.R. Canfield, J. Kerner and R. Korde: Stability and quantum efficiency performance of silicon photodiode detectors in the far ultraviolet. Appl. Opt. 28 (1989) 3940.
    • (1989) Appl. Opt. , vol.28 , pp. 3940
    • Canfield, L.R.1    Kerner, J.2    Korde, R.3
  • 25
    • 0018541498 scopus 로고
    • New profiled silicon photodetector for improved short-wavelength quantum efficiency
    • S.G. Chamberlain: New profiled silicon photodetector for improved short-wavelength quantum efficiency. J. Appl. Phys. 50 (1979) 7228.
    • (1979) J. Appl. Phys. , vol.50 , pp. 7228
    • Chamberlain, S.G.1
  • 26
    • 0018738441 scopus 로고
    • Silicon p-n junction photodiodes sensitive to ultraviolet radiation
    • H. Ouchi, T. Mukai, T. Kamei, and M. Okamura: Silicon p-n junction photodiodes sensitive to ultraviolet radiation. IEEE Trans. Electron Devices ED-26 (1979) 1965.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , pp. 1965
    • Ouchi, H.1    Mukai, T.2    Kamei, T.3    Okamura, M.4
  • 27
    • 0001695017 scopus 로고
    • Detection of ultraviolet radiation using silicon carbide p-n junctions
    • R.B. Campbell and H. Chang: Detection of ultraviolet radiation using silicon carbide p-n junctions. Solid-State Electronics 10 (1967) 949.
    • (1967) Solid-State Electronics , vol.10 , pp. 949
    • Campbell, R.B.1    Chang, H.2
  • 30
    • 0027577002 scopus 로고
    • Blue LEDs, UV photodiodes and high-temperature rectifiers in 6H-SiC
    • J.A. Edmond, H.S. Kong and C.H. Carter Jr.: Blue LEDs, UV photodiodes and high-temperature rectifiers in 6H-SiC. Physics B 185 (1993) 453.
    • (1993) Physics B , vol.185 , pp. 453
    • Edmond, J.A.1    Kong, H.S.2    Carter Jr., C.H.3
  • 32
    • 0028733240 scopus 로고
    • UV-sensitive photodetectors based on metal-semiconductor contacts on 6H-SiC
    • C. Fröjdh, G. Thungström, H.E. Nilsson and C.S. Petersson: UV-sensitive photodetectors based on metal-semiconductor contacts on 6H-SiC. Physica Scripta T54 (1994) 169.
    • (1994) Physica Scripta , vol.T54 , pp. 169
    • Fröjdh, C.1    Thungström, G.2    Nilsson, H.E.3    Petersson, C.S.4
  • 34
    • 0028483396 scopus 로고
    • Widegap column-III nitride semiconductors for UV/blue light emitting devices
    • I. Akasaki and H. Amano: Widegap column-III nitride semiconductors for UV/blue light emitting devices. J. Electrochem. Soc. 141 (1994) 2266.
    • (1994) J. Electrochem. Soc. , vol.141 , pp. 2266
    • Akasaki, I.1    Amano, H.2
  • 35
    • 0029234364 scopus 로고
    • Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and supperlattices
    • M.A. Khan, Q. Chen, C.J. Sun, M.S. Shur, M.F. Macmillan, R.P. Devaty and J. Choyke: Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and supperlattices. Proc. SPIE 2397 (1995) 283.
    • (1995) Proc. SPIE , vol.2397 , pp. 283
    • Khan, M.A.1    Chen, Q.2    Sun, C.J.3    Shur, M.S.4    Macmillan, M.F.5    Devaty, R.P.6    Choyke, J.7
  • 36
    • 21544463523 scopus 로고
    • High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers
    • M.A. Khan, J.N. Kuznia, D.T. Olson, J.M. Van Hove, M. Blasingame and L.F. Reitz: High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers. Appl. Phys. Lett. 60 (1992) 2917.
    • (1992) Appl. Phys. Lett. , vol.60 , pp. 2917
    • Khan, M.A.1    Kuznia, J.N.2    Olson, D.T.3    Van Hove, J.M.4    Blasingame, M.5    Reitz, L.F.6
  • 39
    • 36449004678 scopus 로고
    • Photoconductive ultraviolet sensor using Mg-doped GaN on Si(111)
    • K.S. Stevens, M. Kinniburgh and R. Beresford: Photoconductive ultraviolet sensor using Mg-doped GaN on Si(111). Appl. Phys. Lett. 66 (1995) 3518.
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 3518
    • Stevens, K.S.1    Kinniburgh, M.2    Beresford, R.3
  • 47
    • 3142600453 scopus 로고
    • Anomalous behaviour in GaN-Zn junctions
    • Y. Morimoto and S. Ushio: Anomalous behaviour in GaN-Zn junctions. Jap. J. Appl. Phys. 13 (1974) 365.
    • (1974) Jap. J. Appl. Phys. , vol.13 , pp. 365
    • Morimoto, Y.1    Ushio, S.2
  • 51
    • 21544480777 scopus 로고
    • Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy
    • P. Hacke, T. Detchprohm, K. Hiramatsu and N. Sawaki: Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy. Appl. Phys. Lett. 63 (1993) 2676.
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 2676
    • Hacke, P.1    Detchprohm, T.2    Hiramatsu, K.3    Sawaki, N.4
  • 52
    • 33751335822 scopus 로고
    • Study of Schottky barrier on n-type GaN grown by low-pressure metalorganic chemical vapor deposition
    • J.D. Guo, M.S. Feng, R.J. Guo, F.M. Pan and C.Y. Chang: Study of Schottky .barrier on n-type GaN grown by low-pressure metalorganic chemical vapor deposition. Appl. Phys. Lett. 67 (1995) 2657.
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 2657
    • Guo, J.D.1    Feng, M.S.2    Guo, R.J.3    Pan, F.M.4    Chang, C.Y.5
  • 53
    • 0029369545 scopus 로고
    • Visible-blind ultraviolet photodetectors based on GaN p-n junctions
    • Q. Chen, M.A. Khan, C.J. Sun and J.W. Yang: Visible-blind ultraviolet photodetectors based on GaN p-n junctions. Electronics Letters 31 (1995) 1781.
    • (1995) Electronics Letters , vol.31 , pp. 1781
    • Chen, Q.1    Khan, M.A.2    Sun, C.J.3    Yang, J.W.4
  • 55
    • 84876656846 scopus 로고    scopus 로고
    • GaN ultraviolet photodiodes - Performance modeling
    • to be published
    • M.J. Malachowski and A. Rogalski: GaN ultraviolet photodiodes - performance modeling. J. Technical Physics (to be published).
    • J. Technical Physics
    • Malachowski, M.J.1    Rogalski, A.2
  • 56
    • 0029632612 scopus 로고
    • Gated photodetector based on GaN/AlGaN heterostructure field effect transistor
    • M.A. Khan, M.S. Shur, Q. Chen, J.N. Kuznia and C.J. Sun: Gated photodetector based on GaN/AlGaN heterostructure field effect transistor. Electronics Letters 31 (1995) 398.
    • (1995) Electronics Letters , vol.31 , pp. 398
    • Khan, M.A.1    Shur, M.S.2    Chen, Q.3    Kuznia, J.N.4    Sun, C.J.5
  • 57
    • 0029212138 scopus 로고
    • Optoelectronic GaN-based field effect transistors
    • M.S. Shur and M.A. Khan: Optoelectronic GaN-based field effect transistors. Proc. SPIE 2397 (1995) 294.
    • (1995) Proc. SPIE , vol.2397 , pp. 294
    • Shur, M.S.1    Khan, M.A.2
  • 58
    • 33646171662 scopus 로고
    • Ultraviolet detectors in thin sputtered ZnO films
    • H. Fabricius, T. Skettrup and P. Bisgaard: Ultraviolet detectors in thin sputtered ZnO films. Appl. Opt. 25 (1986) 2764.
    • (1986) Appl. Opt. , vol.25 , pp. 2764
    • Fabricius, H.1    Skettrup, T.2    Bisgaard, P.3
  • 59
    • 84975625702 scopus 로고
    • Schottky type photodiodes as detectors in the VUV and soft x-ray range
    • M. Krumrey, E. Tegler, J. Barth, M. Krisch, F. Schafers and R. Wolf: Schottky type photodiodes as detectors in the VUV and soft x-ray range. Appl. Opt. 27 (1988) 4336.
    • (1988) Appl. Opt. , vol.27 , pp. 4336
    • Krumrey, M.1    Tegler, E.2    Barth, J.3    Krisch, M.4    Schafers, F.5    Wolf, R.6
  • 60
    • 0024749328 scopus 로고
    • Stability of semiconductor photodiodes as VUV detectors"
    • E. Tegeler and M. Krumrey: Stability of semiconductor photodiodes as VUV detectors", Nucl. Instr. and Meth. A282 (1989) 701.
    • (1989) Nucl. Instr. and Meth. , vol.A282 , pp. 701
    • Tegeler, E.1    Krumrey, M.2
  • 61
    • 84879481466 scopus 로고
    • Design of an ultraviolet radiometer. 1: Detector electrical characteristics
    • A.D. Wilson and H. Lyall: Design of an ultraviolet radiometer. 1: Detector electrical characteristics. Appl. Opt. 25 (1986) 4530; Design of an ultraviolet radiometer. 2: Detector optical characteristics. Appl. Opt. 25 (1988) 2540.
    • (1986) Appl. Opt. , vol.25 , pp. 4530
    • Wilson, A.D.1    Lyall, H.2
  • 62
    • 84879481466 scopus 로고
    • Design of an ultraviolet radiometer. 2: Detector optical characteristics
    • A.D. Wilson and H. Lyall: Design of an ultraviolet radiometer. 1: Detector electrical characteristics. Appl. Opt. 25 (1986) 4530; Design of an ultraviolet radiometer. 2: Detector optical characteristics. Appl. Opt. 25 (1988) 2540.
    • (1988) Appl. Opt. , vol.25 , pp. 2540
  • 66
    • 0029640314 scopus 로고
    • Polycrystalline diamond photoconductive device with high UV-visible discrimination
    • R. D. McKeag, S. S. M. Chan, and R. B. Jackman: Polycrystalline diamond photoconductive device with high UV-visible discrimination. Appl. Phys. Lett. 67 (1995) 2117.
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 2117
    • McKeag, R.D.1    Chan, S.S.M.2    Jackman, R.B.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.