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Volumn 56, Issue C, 1998, Pages 293-346

Chapter 6 Electronic Properties and Deep Levels in Germanium-Silicon

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; GERMANIUM;

EID: 3142600768     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)62584-3     Document Type: Chapter
Times cited : (3)

References (104)
  • 2
    • 0001213105 scopus 로고
    • Benedek G., Cavallini A., and Schröter W. (Eds), Plenum Press, New York
    • Alexander H. In: Benedek G., Cavallini A., and Schröter W. (Eds). Point and Extended Defects in Semiconductors 51 (1989), Plenum Press, New York
    • (1989) Point and Extended Defects in Semiconductors , vol.51
    • Alexander, H.1
  • 19
    • 77956750042 scopus 로고    scopus 로고
    • Ph.D. dissertation, The Ohio State University
    • Grillot, P.N. (1996). Ph.D. dissertation, The Ohio State University.
    • (1996)
    • Grillot, P.N.1
  • 39
    • 0022240195 scopus 로고
    • Einspruch N.G. (Ed), Academic Press, New York
    • Kimerling L.C., and Patel J.R. In: Einspruch N.G. (Ed). VLSI Electronics 12 (1985), Academic Press, New York 223
    • (1985) VLSI Electronics , vol.12 , pp. 223
    • Kimerling, L.C.1    Patel, J.R.2
  • 52
    • 0004200984 scopus 로고
    • Pantelides S. (Ed), Gordon and Breach, New York
    • Lang D.V. In: Pantelides S. (Ed). Deep Centers in Semiconductors 489 (1986), Gordon and Breach, New York
    • (1986) Deep Centers in Semiconductors , vol.489
    • Lang, D.V.1
  • 81
    • 77956748967 scopus 로고    scopus 로고
    • Schäffler, F. (1995). Properties of Strained and Relaxed Silicon Germanium. 12, E. Kasper., EMIS Datareviews Series (INSPEC 1995).
    • Schäffler, F. (1995). Properties of Strained and Relaxed Silicon Germanium. 12, E. Kasper., EMIS Datareviews Series (INSPEC 1995).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.