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Volumn 442, Issue , 1997, Pages 313-324
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Dislocation interactions and their impact on electrical properties of GeSi-based heterostructures
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
DIFFUSION;
DISLOCATIONS (CRYSTALS);
ELECTRIC PROPERTIES;
HETEROJUNCTIONS;
LATTICE CONSTANTS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
POINT DEFECTS;
SEMICONDUCTING FILMS;
SEMICONDUCTING SILICON;
DISLOCATION DENSITY;
HALL EFFECT MEASUREMENT;
STRAIN RELAXATION;
THREADING DISLOCATION;
SEMICONDUCTING GERMANIUM COMPOUNDS;
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EID: 0030704188
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (1)
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References (18)
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