Nucleation and growth kinetics of preferred C54 TiSi 2 orientations: Time-resolved x-ray diffraction measurements

Journal of Applied Physics

Volumn 92, Issue 9, 2002, Pages 5189-5195

  Ozcan A S ^a   Ludwig Jr , K F ^a   Lavoie, C ^b   Cabral Jr , C ^b   Harper, J M E ^b   Bradley, R M ^c  

^a Boston University   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c Department of Environmental and Radiological Health Sciences   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEAL TEMPERATURES; ANNEALING TEMPERATURES; AVRAMI EXPONENT; GROWTH VELOCITY; IN-SITU; JOHNSON-MEHL-AVRAMI-KOLMOGOROV; NUCLEATION AND GROWTH; NUCLEATION AND GROWTH KINETICS; NUCLEATION RATE; NUCLEATION SITES; PHASE TRANSFORMATION KINETICS; SEMICONDUCTOR INDUSTRY; SI (001) SUBSTRATE; TEXTURE COMPONENTS; TIME-RESOLVED; TIME-RESOLVED X-RAY DIFFRACTION; X-RAY POLE FIGURE ANALYSIS;

NUCLEATION; SEMICONDUCTOR DEVICE MANUFACTURE; TEXTURES; THIN FILMS; TITANIUM COMPOUNDS; X RAY DIFFRACTION;

KINETICS;

EID: 3142586906     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1512687     Document Type: Article

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