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Volumn 37-38, Issue , 1997, Pages 441-448

Kinetics of the C49-C54 phase transition in TiSi2: New indications from sheet resistance, infrared spectroscopy and molecular dynamics simulations

(9) Grimaldi, M G a La Via, F a Raineri, V a Bocelli, S b Galli, M b Marabelli, F b Bonoli, F c Iannuzzi, M c Miglio, L c

a UNIVERSITY OF CATANIA (Italy)

b UNIVERSITY OF PAVIA (Italy)

c UNIVERSITY OF MILAN (Italy)

Author keywords

Molecular dynamics simulations; Phase transformation; Silicides

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; COMPUTER SIMULATION; FILM PREPARATION; GRAIN SIZE AND SHAPE; INFRARED SPECTROSCOPY; MOLECULAR DYNAMICS; PHASE TRANSITIONS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THIN FILMS; TITANIUM COMPOUNDS;

SHEET RESISTANCE; SILICIDES;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031272610 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(97)00144-5 Document Type: Article

Times cited : (8)

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