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Volumn 17, Issue 3, 2004, Pages 367-372
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Outgassing characteristics of structural materials and the removal of contaminants from EUVL masks using 172-nm radiation
a
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Author keywords
172 nm excimer lamp; Contamination; EUVL; Outgassing
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Indexed keywords
ALUMINUM;
CARBON;
CARBON MONOXIDE;
FLUORINE;
HYDROCARBON;
MAGNESIUM;
METAL;
MOLYBDENUM;
NITROGEN;
OXYGEN;
POLITEF;
POLYIMIDE;
POLYVINYLCHLORIDE;
SILICON;
STAINLESS STEEL;
WATER;
ARTICLE;
ATOMIC FORCE MICROSCOPY;
CONTAMINATION;
DESORPTION;
EXCIMER LASER;
EXTREME ULTRAVIOLET LITHOGRAPHY;
GAS;
OPTICS;
PRESSURE;
ROUGHNESS;
SEMICONDUCTOR;
SURFACE PROPERTY;
SYNCHROTRON RADIATION;
TECHNOLOGY;
ULTRAVIOLET IRRADIATION;
VACUUM;
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EID: 3142585107
PISSN: 09149244
EISSN: None
Source Type: Journal
DOI: 10.2494/photopolymer.17.367 Document Type: Article |
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Times cited : (3)
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References (10)
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