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Volumn 43, Issue 4 B, 2004, Pages 1914-1918

Small-signal analysis of high maximum frequency of oscillation 0.1-μm off-set gamma-shaped gate InGaAs/InAlAs/GaAs metamorphic high-electron-mobility transistors

Author keywords

Gamma shaped gate; Maximum frequency of oscillation; MHEMTs; Narrow gate recess method; Wide gate recess method

Indexed keywords

CONTAMINATION; FABRICATION; FREQUENCIES; IMPURITIES; OSCILLATIONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SILICON; SUBSTRATES;

EID: 3142571052     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1914     Document Type: Conference Paper
Times cited : (20)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.