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Volumn 43, Issue 4 B, 2004, Pages 1914-1918
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Small-signal analysis of high maximum frequency of oscillation 0.1-μm off-set gamma-shaped gate InGaAs/InAlAs/GaAs metamorphic high-electron-mobility transistors
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Author keywords
Gamma shaped gate; Maximum frequency of oscillation; MHEMTs; Narrow gate recess method; Wide gate recess method
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Indexed keywords
CONTAMINATION;
FABRICATION;
FREQUENCIES;
IMPURITIES;
OSCILLATIONS;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR DOPING;
SILICON;
SUBSTRATES;
GAMMA-SHAPED-GATE;
MAXIMUM FREQUENCY OF OSCILLATION;
MHEMTS;
NARROW-GATE-RECESS-METHOD;
WIDE-GATE-RECESS-METHOD;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 3142571052
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.43.1914 Document Type: Conference Paper |
Times cited : (20)
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References (9)
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