Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200 GHz

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 783-786

  Dumka, D C ^a   Hoke, W E ^a   Lemonias, P J ^a   Cueva, G ^a   Adesida, I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; FREQUENCIES; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; TRANSCONDUCTANCE;

CUT OFF FREQUENCIES; SATURATION CURRENT DENSITIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033314638     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)