Fabrication of GaN/Alumina/GaN structure to reduce dislocations in GaN

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 1930-1933

  Hiroki, Masanobu ^a   Kumakura, Kazuhide ^b   Makimoto, Toshiki ^b   Kobayashi, Naoki ^c   Kobayashi, Takashi ^a  

^a NTT CORPORATION   (Japan)

^b NTT Basic Research Laboratories   (Japan)

^c UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

Alumina; Dislocation; Dislocation density; GaN; MOVPE

Indexed keywords

ALUMINA; ANNEALING; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRON CYCLOTRON RESONANCE; ELECTRON DIFFRACTION; ENERGY DISPERSIVE SPECTROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY;

CONDUCTION-BAND; DISLOCATION DENSITY; OPTICAL REFLECTIVITY; WURTZITE;

GALLIUM NITRIDE;

EID: 3142568963     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1930     Document Type: Conference Paper

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