Temperature stable hall effect sensors

IEEE Sensors Journal

Volumn 6, Issue 1, 2006, Pages 106-109

  Partin, Dale L ^a,b   Heremans, Joseph P ^b   Schroeder, Thaddeus ^b   Thrush, Christopher M ^b   Flores Mena, Luis A ^c,d  

^a IEEE   (United States)

^b DELPHI CORPORATION   (United States)

^c Delphi Mexico Technical Center   (Mexico)

^d Delphi Mexico Technical Center   (Mexico)

Author keywords

Electron mobility; Hall effect sensor; Indium gallium antimonide; Molecular beam epitaxy (MBE); Thermal stability

Indexed keywords

HALL EFFECT SENSOR; INDIUM-GALLIUM ANTIMONIDE; MAGNETIC SENSITIVITY;

ELECTRON MOBILITY; HALL EFFECT; INDIUM COMPOUNDS; MAGNETIC FIELD EFFECTS; MOLECULAR BEAM EPITAXY; TEMPERATURE DISTRIBUTION; THERMODYNAMIC STABILITY;

SENSORS;

EID: 31144479451     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2005.860362     Document Type: Article

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