Electronic properties of heteroepitaxial undoped and n-InSb epilayers using SnTe source by molecular beam epitaxy

Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 296-301

  Rawdanowicz, T A ^a   Iyer, S ^a   Mitchel, W C ^b   Saxler, A ^b   Elhamri, S ^b  

^a NORTH CAROLINA A AND T STATE UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYSIS TECHNIQUES; CONDUCTION CHANNEL; DONOR DOPANTS; DOPED LAYERS; DOPED SAMPLE; ELECTRICAL CHARACTERISTIC; GAAS SUBSTRATES; HETEROEPITAXIAL; HIGH CARRIER MOBILITY; MULTI CARRIER; N-TYPE DOPING; RESISTIVITY MEASUREMENT; TEMPERATURE RANGE; THICKNESS DEPENDENCE;

ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; EPILAYERS; EPITAXIAL GROWTH; MAGNETIC FIELDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING;

INDIUM ANTIMONIDES;

EID: 0036640205     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1476086     Document Type: Article

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