Molecular-beam-epitaxial growth of Ga1-xInxSb on GaAs substrates

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 883-887

  Roslund, J H ^a   Zsebok, O ^a   Swenson, G ^a   Andersson, T G ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL DEFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ROUGHNESS; X RAY CRYSTALLOGRAPHY;

HALL MOBILITY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031141090     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00978-5     Document Type: Article

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