Surface crystallization of ion-implantation damaged Si95Ge5 on Si(100)

Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 428-432

  Peto G ^a   Horvath, Z E ^a   Kanski, J ^b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; CRYSTALLIZATION; INTERFACES (MATERIALS); ION IMPLANTATION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

SURFACE REGROWTH;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0034300279     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00462-1     Document Type: Article

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