Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 1, 2006, Pages 142-148

  Barabash, R I ^a   Barabash, O M ^a   Ice, G E ^a   Roder, C ^b   Figge, S ^b   Einfeldt, S ^b,e   Hommel, D ^b   Katona, T M ^c   Speck, J S ^c   DenBaars, S P ^c   Davis, R F ^d  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF BREMEN   (Germany)

^c University of California   (United States)

^d North Carolina State University   (United States)

^e LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC TILTS; EXTRINSIC STRESSES; WING TILT; X-RAY MICRODIFFRACTION;

CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; SAMPLING; SCANNING ELECTRON MICROSCOPY; STRESS RELAXATION; THERMAL EXPANSION; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 31144466030     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200563503     Document Type: Conference Paper

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