SCOPUS 정보 검색 플랫폼

Journal De Physique. IV : JP

Volumn 11, Issue 3, 2001, Pages

Characterization and stressing properties of polysilicon TFTs utilizing oxide films deposited using TEOS

(3) Kouvatsos, D N a Vamvakas, V Em a Davazoglou, D a

a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); POLYSILICON; STRESSES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

AMORPHOUS FILMS;

EID: 0034842605 PISSN: 11554339 EISSN: None Source Type: Conference Proceeding
DOI: 10.1051/jp4:20013130 Document Type: Conference Paper

Times cited : (1)

References (15)

1
- 0018480470
- (1979) J. Electrochem. Soc. , vol.126 , Issue.6 , pp. 1042-1046
- Adams, A.C.¹ Capio, C.D.²

2
- 0003679027
- edited by S. M. Sze, Mc Graw - Hill International Editions
- (1988) VLSI Technology, Second Edition
- Adams, A.C.¹

3
- 0032050970
- (1998) J. Electrochem. Soc. , vol.145 , Issue.4 , pp. 1310-1317
- Davazoglou, D.¹ Vamvakas, V.Em.² Vahlas, C.³

4
- 0031995025
- (1998) Microelectron. Reliab. , vol.38 , Issue.2 , pp. 265-269
- Vamvakas, V.Em.¹ Davazoglou, D.² Vahlas, C.³

5
- 84889152129
- to be submitted for publication later this year
- Vamvakas, V.Em.¹ Davazoglou, D.²

6
- 0000439385
- (1965) J. Electrochem. Soc. , vol.112 , Issue.10 , pp. 1013-1019
- Pliskin, W.A.¹ Lehman, H.S.²

7
- 33847571146
- (1986) J. Vac. Sci. Technol. A , vol.4 , Issue.3 , pp. 689-694
- Pai, P.G.¹ Chao, S.S.² Takagi, Y.³ Lucovsky, G.⁴

8
- 84919045215
- (1966) J. Electrochem. Soc. , vol.113 , pp. 914
- Secrist, D.R.¹ Mackenzie, J.D.²

9
- 0000543530
- (1997) Electrochemical Society Proceedings , vol.97 , Issue.25 , pp. 147-154
- Arndt, J.¹ Wahl, G.²

10
- 0033362957
- (1999) J. Electrochem. Soc. , vol.146 , Issue.9 , pp. 3415-3419
- Schlote, J.¹ Bugiel, E.² Arndt, J.³ Wahl, G.⁴

11
- 0004205669
- Kluwer Academic Publishers
- (1988) Polycrystalline silicon for integrated circuit applications
- Kamins, T.¹

12
- 84889138711
- The Electrochemical Society Inc.
- (1998) Thin Film Transistor Technologies IV (TFTT IV) , pp. 336
- Kouvatsos, D.N.¹ Vamvakas, V.Em.² Davazoglou, D.³

13
- 36449005413
- (1995) Appl. Phys. Lett. , vol.67 , pp. 76
- Tai, Y.¹ Tsai, J.² Cheng, H.³ Su, F.⁴

14
- 0034276443
- (2000) Semicond. Sci. Technol. , vol.15 , pp. 888
- Yaung, D.N.¹ Fang, Y.K.² Huang, K.C.³ Chen, C.Y.⁴ Wang, Y.J.⁵ Hung, C.⁶ Wuu, S.G.⁷ Liang, M.S.⁸

15
- 0000061328
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1024
- Brown, T.M.¹ Migliorato, P.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.