Investigation of a nanocrystalline silicon phase embedded in SiO xthin films grown by pulsed laser deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 2, 2005, Pages 519-524

  Fazio, Enza ^a   Barletta, Enrico ^a   Barreca, Francesco ^a   Neri, Fortunato ^a   Trusso, Sebastiano ^b  

^a UNIVERSITY OF MESSINA   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; SILICA; SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS; THIN FILMS;

DIFFUSION CONTROLLED MECHANISM; RAMAN BAND; SILICON TARGETS;

NANOSTRUCTURED MATERIALS;

EID: 31144435888     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1880252     Document Type: Conference Paper

References (25)

1. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzó, and F. Priolo, Nature (London) 408, 440 (2000).
2. H. Nishikawa, Silicon-based Materials and Devices Vol. 2 Materials and Processing, edited by, H. S. Nalwa, (Academic, S. Diego, 2001), Chap..
3. A. J. De Castro, F. Lopez, J. Melendez, and M. Fernandez, Thin Solid Films 241, 202 (1993).
4. H. Rinnert, M. Vergnat, G. Marchal, and A. Burneau, J. Lumin. 80, 445 (1999).
5. E. Dehan, P. Temple-Boyer, R. Henda, J. J. Pedroviejo, and E. Scheid, Thin Solid Films 266, 14 (1995).
6. P. Gonzales, D. Fernandez, J. Pou, E. Garcia, J. Serra, B. Leon, and M. Perez-Amor, Thin Solid Films 218, 170 (1992).
7. E. Desbiens, R. Dolbec, and M. A. El Khakani, J. Vac. Sci. Technol. A 20, 1157 (2002).
8. J. M. Lackner, W. Waldhauser, R. Ebner, W. Lenz, C. Suess, G. Jakopic, G. Leising, and H. Hutter, Surf. Coat. Technol. 163-164, 300 (2003).
9. D. Nesheva, C. Raptis, A. Perakis, I. Bineva, Z. Aneva, Z. Levi, S. Alexandrova, and H. Hofmeister, J. Appl. Phys. 92, 4678 (2002).
10. X. Y. Chen, Y. F. Lu, Y. H. Wu, B. J. Cho, M. H. Liu, D. Y. Dai, and W. D. Song, J. Appl. Phys. 93, 6311 (2003).
11. L. A. Nesbit, Appl. Phys. Lett. 46, 38 (1985).
12. I. Montero, L. Galán, O. Najmi, and J. M. Albella, Phys. Rev. B 50, 4881 (1994).
13. P. G. Pai, S. S. Chao, Y. Takagi, and G. Lucovsky, J. Vac. Sci. Technol. A 4, 689 (1986).
14. M. Yoshikawa, K. Iwagami, N. Morita, T. Matsunobe, and H. Ishida, Thin Solid Films 310, 167 (1997).
15. H. Richter, Z. P. Wang, and L. Ley, Solid State Commun. 39, 625 (1981).
16. H. Campbell and P. M. Fauchet, Solid State Commun. 58, 739 (1986).
17. S. Trusso, C. Vasi, M. Allegrini, F. Fuso, and G. Pennelli, J. Vac. Sci. Technol. B 17, 468 (1999).
18. E. Bustarret, M. A. Hachicha, and M. Brunel, Appl. Phys. Lett. 52, 1675 (1988).
19. J. Zi, K. Zhang, and X. Xie, Phys. Rev. B 55, 9263 (1997).
20. H. Rinnert, M. Vergnat, and A. Burneau, J. Appl. Phys. 89, 237 (2001).
21. M. Molinari, H. Rinnert, and M. Vergnat, Appl. Phys. Lett. 82, 3877 (2003).
22. S. Lombardo and S. A. Campisano, Mater. Sci. Eng., R. 17, 281 (2000).
23. B. J. Hinds, F. Wang, D. M. Wolf, C. L. Hinkle, and G. Lucovsky, J. Vac. Sci. Technol. B 16, 2171 (1998).
24. B. Fazio, M. Vulpio, C. Gerardi, Y. Liao, I. Crupi, S. Lombardo, S. Trusso, and F. Neri, J. Electrochem. Soc. 149, G376 (2002).
25. F. Iacona, G. Franzó, and C. Spinella, J. Appl. Phys. 87, 1295 (2000).