Effect of plating current density and annealing on impurities in electroplated Cu film

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 23, Issue 4, 2005, Pages 658-662

  Liu, Chi Wen ^a   Wang, Ying Lang ^a,b   Tsai, Ming Shih ^c   Feng, Hsien Ping ^d   Chang, Shih Chieh ^b   Hwang, Gwo Jen ^b  

^a NATIONAL CHIAYI UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^d TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CURRENT DENSITY; DESORPTION; PLATING; SECONDARY ION MASS SPECTROMETRY;

ELECTROPLATED COPPER FILMS; PLATING CURRENT DENSITY; THERMAL ANNEALING;

COPPER;

EID: 31044446089     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1931679     Document Type: Article

References (11)

1. S. P. Murarka, I. V. Verner, and R. J. Gutmann, Cu-Fundamental Mechanisms for Microelectronic Applications (Wiley, New York, 2000).
2. S. Gandikota, D. Padhi, S. Ramanathan, C. McGuirk, R. Emami, S. Parikh, G. Dixit, and R. Cheung, Proceedings of International Interconnect Technology Conference (IITC), 2002, p. 197.
3. S. C. Chang, J. M. Shieh, B. T. Dai, M. S. Feng, and Y. H. Li, J. Electrochem. Soc. 149, G535 (2002).
4. M. Kang and A. A. Gewirth, J. Electrochem. Soc. 150, C426 (2003).
5. M. Hayase, M. Taketani, K. Aizawa, T. Hatsuzawa, and K. Hayabusa, Electrochem. Solid-State Lett. 5, C98 (2002).
6. M. Hayase, M. Taketani, T. Hatsuzawa, and K. Hayabusa, Electrochem. Solid-State Lett. 6, C92 (2003).
7. A. Frank and A. J. Bard, J. Electrochem. Soc. 150, C244 (2003).
8. M. Tan and J. N. Harb, J. Electrochem. Soc. 150, C420 (2003).
9. Q. T. Jiang and M. E. Thomas, J. Vac. Sci. Technol. B 19, 762 (2001).
10. C. Lingk and M. E. Gross, J. Appl. Phys. 84, 5547 (1998).
11. P. K. Pandey, S. N. Sahu, and S. Chandra, Handbook of Semiconductor Electrodeposition (Marcel Dekker, New York, 1996).