Shifted leakage power characteristics of dynamic circuits due to gate oxide tunneling

Proceedings - IEEE International SOC Conference

Volumn , Issue , 2005, Pages 151-154

  Liu, Zhiyu ^a   Kursun, Volkan ^a  

^a Wisconsin Electric Machines and Power Electronics Consortium   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DYNAMIC NODE VOLTAGE STATE; DIELECTRIC TUNNELING CURRENT; LEAKAGE POWER CONSUMPTION;

CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; ELECTRIC POWER UTILIZATION; LEAKAGE CURRENTS; VECTORS;

INTEGRATED CIRCUIT LAYOUT;

EID: 30844455993     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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