The effect of strained Si 1-xGe x and Si 1-yC y layers for La 0.75Sr 0.25MnO 3 films grown on oxide-buffered Si substrates

Journal of Applied Physics

Volumn 99, Issue 1, 2006, Pages

  Kim, J H ^a   Grishin, A M ^a   Radamson, H H ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BI4 TI3 O12 CEO2 YTTRIUM-STABILIZED-ZIRCONIA-BUFFERED SI1-X GEX SI; BUFFER LAYER STACK; LSMO FILM; OXIDE-BUFFERED SI SUBSTRATES;

COLOSSAL MAGNETORESISTANCE; ELECTRIC CONDUCTIVITY; GERMANIUM; LANTHANUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; YTTRIUM COMPOUNDS;

FILM GROWTH;

EID: 30844455355     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2150260     Document Type: Article

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