Influence of surface roughness and internal strain on defect spectrum and intensity of low-temperature photoluminescence of thin Si1-xGe x layers

Journal of Applied Physics

Volumn 95, Issue 12, 2004, Pages 7681-7689

  Ligatchev, V ^a   Wong, T K S ^a   Yoon, S F ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; LOW TEMPERATURE EFFECTS; MORPHOLOGY; PHONONS; PHOTOLUMINESCENCE; SILICON WAFERS; STRAIN; SURFACE ROUGHNESS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CONDUCTION BANDS (CB); DEFECTS STATE DENSITY; FILM STRUCTURE; VALENCE BANDS (VB);

SILICON ALLOYS;

EID: 3142541630     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1739288     Document Type: Article

References (37)

1. B. S. Meyerson, D. L. Harame, J. Stork, E. Crabbe, J. Comfort, and G. Patton, Int. J. High Speed Electron. Syst. 5, 473 (1994).
2. J. C. Bean, Proc. IEEE 80, 571 (1992).
3. S. L. Yellen, A. H. Shepard, R. J. Dalby, J. A. Baumann, H. B. Serreze, T. S. Guido, R. Soltz, K. J. Bystrom, C. M. Harding, and R. G. Waters III, IEEE J. Quantum Electron. 29, 2058 (1993).
4. K. Ismail, F. K. LeGoues, K. L. Saenger, M. Arafa, J. O. Chu, P. M. Mooney, and B. S. Meyerson, Phys. Rev. Lett. 73, 3447 (1994).
5. E. Fitzgerald, Y.-H. Xie, M. L. Green, D. Brasen, A. R. Korton, J. Michel, Y.-J. Mie, and B. E. Weir, Appl. Phys. Lett. 59, 811 (1991).
6. Y. J. Mii, Y. H. Xie, E. A. Fitzgerald, D. Monroe, F. A. Theil, and B. E. Weir, Appl. Phys. Lett. 59, 1611 (1991).
7. F. Schaffler, D. Tobben, H. J. Herzog, G. Abstreiter, and B. Hollander, Semicond. Sci. Technol. 7, 260 (1992).
8. S. A. Ringel and P. N. Grilot, Semicond. Semimetals 56, 293 (1999).
9. J. C. Campbell, Semicond. Semimetals 56, 347 (1999).
10. P. K. Swain, D. Misra, and P. E. Thomson, J. Appl. Phys. 79, 4402 (1996).
11. L. Vescan, R. Apetz, and H. Lutz, J. Appl. Phys. 73, 7427 (1993).
12. M. Serpentini, G. Bremond, V. Aubry-Fortuna, F. Meyer, and M. Marnor, J. Vac. Sci. Technol. B 16, 1684 (1998).
13. G. P. Watson, J. L. Benton, Y. H. Xie, and E. A. Fitzgerald, J. Appl. Phys. 83, 3773 (1998).
14. T. Stoica and L. Vescan, J. Appl. Phys. 93, 4461 (2003).
15. A. Souifi et al., J. Vac. Sci. Technol. B 10, 2002 (1992).
16. V. Loup, J. M. Hartmann, G. Rolland, P. Holliger, F. Laugier, C. Vannuffel, and M. N. Semeria, J. Vac. Sci. Technol. B 20, 1048 (2002).
17. M. Fatemi and F. E. Stahlbush, Appl. Phys. Lett. 58, 825 (1991).
18. P. Waltereit, J. M. Fernandez, S. Kaya, and T. J. Thornton, Appl. Phys. Lett. 72, 2262 (1998).
19. X-Ray Diffraction Procedures for Polycrystalline and Amorphous Materials, edited by H. P. Klug and L. E. Alexander (Wiley, New York, 1974), p. 966.
20. J. E. Van Nostrand, D. G. Gahill, I. Petrov, and G. E. Greene, J. Appl. Phys. 83, 1098 (1998).
21. T. S. Kuan and S. S. Iyer, Appl. Phys. Lett. 59, 2242 (1991).
22. K. E. Khor and S. Das Sarma, J. Vac. Sci. Technol. B 9, 2198 (1991).
23. V. Ligatchev, T. K. S. Wong, L. Bo, and Rusli, J. Appl. Phys. 92, 4605 (2002).
24. A. C. Ferrary et al., Phys. Rev. B 62, 11089 (2000).
25. K. Schmalz, I. N. Yassievich, E. J. Collart, and D. J. Gravensteijn, Phys. Rev. B 54, 16799 (1996).
26. V. Ligatchev, S. F. Yoon, J. Ahn, Q. Zhang, and Rusli, Radiat. Eff. Defects Solids 154, 261 (2001).
27. S. Weiss and R. Kassing, Solid-State Electron. 31, 1733 (1988).
28. C. G. Ahn, H. S. Kang, Y. K. Kwon, S. M. Lee, B. R. Ryum, and B. K. Kang, J. Appl. Phys. 86, 1542 (1999).
29. A. Souifi et al., J. Vac. Sci. Technol. B 16, 1745 (1998).
30. E. Thor, M. Muhlberger, L. Palmetshofer, and F. Schaffler, J. Appl. Phys. 90, 2252 (2001).
31. L. Ley, in Physics of the Hydrogenated Amorphous Silicon, edited by J. Jounopulos and G. Lucovski (Springer, New York, 1984).
32. F. Cerdeira, Semicond. Semimetals 56, 225 (1999).
33. H. P. Zeindl and S. Nilsson, J. Appl. Phys. 77, 1753 (1995).
34. I. A. Buyanova et al., Appl. Phys. Lett. 71, 3676 (1997).
35. M. Lyakas et al., J. Appl. Phys. 78, 4975 (1995).
36. S. Fukatsu, H. Sunamura, Y. Shiraki, and S. Komiayma, Appl. Phys. Lett. 71, 258 (1997).
37. T. Fromherz and G. Bauer, in Properties of Strained and Relaxed Silicon-Germanium (INSPEC, London, 1995), p. 87.